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11: Silicon — Valence and low-lying conduction states

Image title
Unit cell of Silicon crystal plotted with the XCrySDen program.

Valence States

  • Outline: Obtain MLWFs for the valence bands of silicon.

1-5. Inspect the output file silicon.wout. The total spread converges to its minimum value after just a few iterations. Note that the geometric centre of each MLWF lies at the centre of the Si-Si bond. Note also that the memory requirement for the minimisation of the spread is very low as the MLWFs are defined by just the \(4\times4\) unitary matrices \(U(\mathbf{k})\).

Below a snippet from the silicon.wout output file

Output file
 Final State
  WF centre and spread    1  ( -0.674701,  0.674701, -0.674701 )     1.59185520
  WF centre and spread    2  ( -0.674701, -0.674701,  0.674701 )     1.59185520
  WF centre and spread    3  (  0.674701,  0.674701,  0.674701 )     1.59185520
  WF centre and spread    4  (  0.674701, -0.674701, -0.674701 )     1.59185520
  Sum of centres and spreads ( -0.000000,  0.000000,  0.000000 )     6.36742081

         Spreads (Ang^2)       Omega I      =     5.801375426
        ================       Omega D      =     0.000000000
                               Omega OD     =     0.566045385
    Final Spread (Ang^2)       Omega Total  =     6.367420811
 ------------------------------------------------------------------------------

Memory estimates may be found in the MEMORY ESTIMATE section of the silicon.wout file.

Output file
 *============================================================================*
 |                              MEMORY ESTIMATE                               |
 |         Maximum RAM allocated during each phase of the calculation         |
 *============================================================================*
 |                        Disentanglement            1.57 Mb                  |
 |                            Wannierise:            0.47 Mb                  |

Converged values for the total spread functional and its components are shown in Table 1.

Table 1. Converged values of the components of spread functional and their sum, given in Å\(^2\).

MP mesh \(\Omega\) \(\Omega_{\text{I}}\) \(\Omega_{\text{OD}}\) \(\Omega_{\text{D}}\)
\(4\times4\times4\) 6.3674 5.8014 0.5660 0.0000
  • Plot the MLWFs.

    The four MLWFs with \(\sigma\) character describing the valence manifold of Si are shown in Figure 2 (panels a, b, c, and d, respectively).

    MLWF 1 MLWF 2 MLWF 3 MLWF 4

    Four MLWFs for the valence manifold of Si: a. MLWF 1, b. MLWF 2, c. MLWF 3, and d. MLWF 4.

Valence + Conduction States

  • Outline: Obtain MLWFs for the valence and low-lying conduction-band states of Si. Plot the interpolated bandstructure. Apply a scissors correction to the conduction bands.

Inspect the output file silicon.wout. The minimisation of the spread occurs in a two-step procedure. First, we minimise \(\Omega_{\text{I}}\) -- this is the extraction of the optimal subspace in the disentanglement procedure. Then, we minimise \(\Omega_{\text{D}} + \Omega_{\text{OD}}\).

Converged values for the total spread functional and its components are shown in Table 2. The two groups of four MLWFs with \(sp3\) character are shown in Figure 3

Output file
                   Extraction of optimally-connected subspace
                   ------------------------------------------
 +---------------------------------------------------------------------+<-- DIS
 |  Iter     Omega_I(i-1)      Omega_I(i)      Delta (frac.)    Time   |<-- DIS
 +---------------------------------------------------------------------+<-- DIS
       1      12.97640155      12.44630235       4.259E-02      0.00    <-- DIS
       .  .     .    .    .

      79      12.33580893      12.33580893      -6.531E-11      0.23    <-- DIS
      80      12.33580893      12.33580893      -5.241E-11      0.23    <-- DIS

             <<<      Delta < 1.000E-10  over  3 iterations     >>>
             <<< Disentanglement convergence criteria satisfied >>>

        Final Omega_I    12.33580893 (Ang^2)

 +----------------------------------------------------------------------------+
Output file
 Final State
  WF centre and spread    1  (  1.807167,  1.807167,  1.807167 )     2.01695824
  WF centre and spread    2  (  1.807167,  0.891636,  0.891636 )     2.01695823
  WF centre and spread    3  (  0.891636,  1.807167,  0.891636 )     2.01695823
  WF centre and spread    4  (  0.891636,  0.891636,  1.807167 )     2.01695824
  WF centre and spread    5  (  0.226733,  0.226733,  0.226733 )     2.37014516
  WF centre and spread    6  (  0.226733, -0.226733, -0.226733 )     2.37014508
  WF centre and spread    7  ( -0.226733,  0.226733, -0.226733 )     2.37014515
  WF centre and spread    8  ( -0.226733, -0.226733,  0.226733 )     2.37014514
  Sum of centres and spreads (  5.397608,  5.397608,  5.397608 )    17.54841346

         Spreads (Ang^2)       Omega I      =    12.335808933
        ================       Omega D      =     0.177593840
                               Omega OD     =     5.035010692
    Final Spread (Ang^2)       Omega Total  =    17.548413465
 ------------------------------------------------------------------------------

Table 2. Converged values of the components of spread functional and their sum, given in Å\(^2\).

MP mesh \(\Omega\) \(\Omega_{\text{I}}\) \(\Omega_{\text{OD}}\) \(\Omega_{\text{D}}\)
\(4\times4\times4\) 17.54841 12.3358 5.03501 0.17759
MLWF 1 MLWF 2 MLWF 3 MLWF 4 MLWF 5 MLWF 6 MLWF 7 MLWF 8
Eight MLWFs with \(sp3\) character, four on each Si atom in the unit cell.

Plot the bandstructure.

The interpolated bandstructure is given in Figure 4.

Image title
Bandstructure of silicon from DFT calculation (solid black) and from Wannier interpolation (solid red).

Further ideas

  • Compare the Wannier-interpolated bandstructure with the full pwscf bandstructure with a finer \(k\)-point grid.

    Result for a \(8\times8\times8\) mesh is shown in Figure 5.

    Image title

    Bandstructure of silicon from DFT calculation (solid black) and from Wannier interpolation with a \(4\times4\times4\) mesh (solid red) and \(8\times8\times8\) mesh (solid blue).

  • Compute four MLWFs spanning the low-lying conduction states.

    The MLWFs spanning the 4 low-lying conduction states are shown in Figure 6. The initial projections were 4 \(sp3\) on the Si atom at (0,0,0).

    MLWF 1 MLWF 2 MLWF 3 MLWF 4

    Four MLWFs spanning the low-lying conduction states of Si: a. MLWF 1, b. MLWF 2, c. MLWF 3, and d. MLWF 4.